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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1500 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min) high dc current gain : h fe = 1000(min) @i c = 10a low saturation voltage applications designed for high current switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 8 v i c collector current-continuous 10 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1500 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 100 v v ce( sat ) collector-emitter saturation voltage i c = 10a; i b = 25ma 1.5 v v be( sat ) base-emitter saturation voltage i c = 10a; i b = 25ma 2.0 v i cbo collector cutoff current v cb = 150v; i e = 0 10 a i ebo emitter cutoff current v eb = 8v; i c = 0 16 ma h fe dc current gain i c = 10a; v ce = 2v 1000 v ecf c-e diode forward voltage i f = 10a 3.0 v c ob output capacitance i e = 0; v cb = 50v, f test = 1mhz 75 pf f t current-gain?bandwidth product i c = 1a; v ce = 5v 20 mhz switching times t on turn-on time 0.6 s t stg storage time 3.0 s t f fall time i b1 = -i b2 = 25ma; r l = 5 ; v cc = 50v 1.0 s isc website www.iscsemi.cn 2 |
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